Parameters | |
---|---|
Mfr | International Rectifier |
Series | HEXFET® |
Package | Tube |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 40mOhm @ 3.8A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223 |
Package / Case | TO-261-4, TO-261AA |
RoHS Status | ROHS3 Compliant |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 1,760 |
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