| Parameters |
| Mfr |
International Rectifier |
| Series |
HEXFET® |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
30 V |
| Current - Continuous Drain (Id) @ 25°C |
10A (Ta), 28A (Tc) |
| Rds On (Max) @ Id, Vgs |
16mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs |
10 nC @ 10 V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
560 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
2.6W (Ta), 20W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
8-PQFN-Dual (3.3x3.3), Power33 |
| Package / Case |
8-PowerVDFN |
| Moisture Sensitivity Level (MSL) |
Vendor Undefined |
| REACH Status |
REACH Unaffected |
| Other Names |
2156-IRFHM8342TRPBF-600047 |
| Standard Package |
1 |
N-Channel 30 V 10A (Ta), 28A (Tc) 2.6W (Ta), 20W (Tc) Surface Mount 8-PQFN-Dual (3.3x3.3), Power33