Parameters |
Mfr |
International Rectifier |
Series |
FASTIRFET™, HEXFET® |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100 V |
Current - Continuous Drain (Id) @ 25°C |
11A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
16.4mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id |
3.6V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs |
19 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
733 pF @ 50 V |
FET Feature |
- |
Power Dissipation (Max) |
3.6W (Ta), 39W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-PQFN (5x6) |
Package / Case |
8-PowerTDFN |
RoHS Status |
Not applicable |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
0000.00.0000 |
Standard Package |
1 |
N-Channel 100 V 11A (Ta), 35A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount 8-PQFN (5x6)