| Parameters |
| Mfr |
International Rectifier |
| Series |
HEXFET® |
| Package |
Bulk |
| Product Status |
Active |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 N-Channel (Dual) |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
25V |
| Current - Continuous Drain (Id) @ 25°C |
25A |
| Rds On (Max) @ Id, Vgs |
3.4mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id |
2.1V @ 35µA |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds |
1321pF @ 13V |
| Power - Max |
25W, 28W |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Supplier Device Package |
Dual PQFN (5x4) |
| Base Product Number |
IRFH4257 |
| RoHS Status |
Not applicable |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
0000.00.0000 |
| Standard Package |
1 |
Mosfet Array 25V 25A 25W, 28W Surface Mount Dual PQFN (5x4)