International Rectifier IRFB31N20DPBF

MOSFET N-CH 200V 31A TO220AB

Manufacturer: International Rectifier
Manufacturer's number: International Rectifier IRFB31N20DPBF
Package: Bulk
Datasheet: PDF
Stock: 7619
SKU: IRFB31N20DPBF
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Details

Parameters
Mfr	International Rectifier
Series	HEXFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	107 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2370 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 200 V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole TO-220AB