International Rectifier IRFAF50

N-CHANNEL HERMETIC MOS HEXFET

Manufacturer: International Rectifier
Manufacturer's number: International Rectifier IRFAF50
Package: Bulk
Datasheet: PDF
Stock: 644
SKU: IRFAF50
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Details

Parameters
Mfr	International Rectifier
Series	HEXFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.85Ohm @ 6.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-204AA (TO-3)
Package / Case	TO-204AA, TO-3
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	1

N-Channel 900 V 6.2A (Tc) 150W (Tc) Through Hole TO-204AA (TO-3)