Parameters |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Tube |
Product Status |
Obsolete |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel (Dual) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
9.7A (Ta) |
Rds On (Max) @ Id, Vgs |
15.5mOhm @ 9.7A, 10V |
Vgs(th) (Max) @ Id |
2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs |
9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
760pF @ 15V |
Power - Max |
2W (Ta) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package |
8-SO |
Base Product Number |
IRF8313 |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
3,800 |
Mosfet Array 30V 9.7A (Ta) 2W (Ta) Surface Mount 8-SO