| Parameters |
| Mfr |
International Rectifier |
| Series |
HEXFET® |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
12 V |
| Current - Continuous Drain (Id) @ 25°C |
11.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs |
14mOhm @ 11.5A, 4.5V |
| Vgs(th) (Max) @ Id |
900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
38 nC @ 4.5 V |
| Vgs (Max) |
±8V |
| Input Capacitance (Ciss) (Max) @ Vds |
3529 pF @ 10 V |
| FET Feature |
- |
| Power Dissipation (Max) |
2.5W (Ta) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
8-SO |
| Package / Case |
8-SOIC (0.154", 3.90mm Width) |
| ECCN |
EAR99 |
| HTSUS |
8542.39.0001 |
| Standard Package |
1 |
P-Channel 12 V 11.5A (Tc) 2.5W (Ta) Surface Mount 8-SO