Parameters | |
---|---|
Mfr | International Rectifier |
Series | HEXFET® |
Package | Tube |
Product Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 5.3A |
Rds On (Max) @ Id, Vgs | 58mOhm @ 2.9A, 4.5V |
Vgs(th) (Max) @ Id | 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 15V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Base Product Number | IRF731 |
RoHS Status | ROHS3 Compliant |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 3,800 |
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