| Parameters |
| Mfr |
International Rectifier |
| Series |
HEXFET® |
| Package |
Tube |
| Product Status |
Obsolete |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
N and P-Channel |
| FET Feature |
- |
| Drain to Source Voltage (Vdss) |
30V |
| Current - Continuous Drain (Id) @ 25°C |
4A (Ta), 3A (Ta) |
| Rds On (Max) @ Id, Vgs |
50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds |
520pF, 440pF @ 15V |
| Power - Max |
1.4W (Ta) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package |
8-SO |
| Base Product Number |
IRF73 |
| RoHS Status |
ROHS3 Compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
3,800 |
Mosfet Array 30V 4A (Ta), 3A (Ta) 1.4W (Ta) Surface Mount 8-SO