| Parameters |
| Mfr |
International Rectifier |
| Series |
DirectFET® |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
25 V |
| Current - Continuous Drain (Id) @ 25°C |
19A (Ta), 74A (Tc) |
| Rds On (Max) @ Id, Vgs |
3.7mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id |
2.1V @ 35µA |
| Gate Charge (Qg) (Max) @ Vgs |
17 nC @ 4.5 V |
| Vgs (Max) |
±16V |
| Input Capacitance (Ciss) (Max) @ Vds |
1590 pF @ 13 V |
| FET Feature |
- |
| Power Dissipation (Max) |
2.1W (Ta), 32W (Tc) |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
DirectFET™ Isometric SQ |
| Package / Case |
DirectFET™ Isometric SQ |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
0000.00.0000 |
| Standard Package |
225 |
N-Channel 25 V 19A (Ta), 74A (Tc) 2.1W (Ta), 32W (Tc) Surface Mount DirectFET™ Isometric SQ