Parameters |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30 V |
Current - Continuous Drain (Id) @ 25°C |
32A (Ta), 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
1.7mOhm @ 32A, 10V |
Vgs(th) (Max) @ Id |
2.35V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs |
77 nC @ 4.5 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
6140 pF @ 15 V |
FET Feature |
- |
Power Dissipation (Max) |
2.8W (Ta), 89W (Tc) |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
DIRECTFET™ MT |
Package / Case |
DirectFET™ Isometric MT |
Moisture Sensitivity Level (MSL) |
Vendor Undefined |
REACH Status |
REACH Unaffected |
Other Names |
2156-IRF6726MTRPBFTR-600047 |
Standard Package |
1 |
N-Channel 30 V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT