Parameters |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
5.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
2.7V, 4.5V |
Rds On (Max) @ Id, Vgs |
60mOhm @ 5.4A, 4.5V |
Vgs(th) (Max) @ Id |
1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
22 nC @ 4.5 V |
Vgs (Max) |
±12V |
Input Capacitance (Ciss) (Max) @ Vds |
780 pF @ 15 V |
FET Feature |
- |
Power Dissipation (Max) |
2.5W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-SO |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
P-Channel 20 V 5.4A (Ta) 2.5W (Ta) Surface Mount 8-SO