Parameters |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
55 V |
Current - Continuous Drain (Id) @ 25°C |
110A (Tc) |
Rds On (Max) @ Id, Vgs |
8mOhm @ 62A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
146 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds |
3247 pF @ 25 V |
FET Feature |
- |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220AB |
Package / Case |
TO-220-3 |
Moisture Sensitivity Level (MSL) |
Vendor Undefined |
REACH Status |
REACH Unaffected |
Other Names |
2156-94-2354PBF-600047 |
Standard Package |
1 |
N-Channel 55 V 110A (Tc) Through Hole TO-220AB