Infineon Technologies SPU21N05L

N-CHANNEL POWER MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies SPU21N05L
Package: Bulk
Datasheet: PDF
Stock: 5262
SKU: SPU21N05L
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Details

Parameters
Mfr	Infineon Technologies
Series	SIPMOS®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	40mOhm @ 14A, 10V
Vgs(th) (Max) @ Id	2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	55W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	P-TO251-3-1
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 55 V 20A (Tc) 55W (Tc) Through Hole P-TO251-3-1