Infineon Technologies IRFR1018EPBF-INF

HEXFET POWER MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IRFR1018EPBF-INF
Package: Bulk
Datasheet: -
Stock: 3648
SKU: IRFR1018EPBF-INF
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Details

Parameters
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	1
Mfr	Infineon Technologies
Series	HEXFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Rds On (Max) @ Id, Vgs	8.4mOhm @ 47A, 10V
Vgs(th) (Max) @ Id	4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	69 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2290 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252AA)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status	ROHS3 Compliant

N-Channel 60 V 56A (Tc) 110W (Tc) Surface Mount D-PAK (TO-252AA)