| Parameters |
| Mfr |
Infineon Technologies |
| Series |
HEXFET® |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
25 V |
| Current - Continuous Drain (Id) @ 25°C |
17A (Ta), 68A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Rds On (Max) @ Id, Vgs |
4.9mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs |
18 nC @ 4.5 V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
1570 pF @ 13 V |
| FET Feature |
- |
| Power Dissipation (Max) |
2.2W (Ta), 36W (Tc) |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
DIRECTFET™ SQ |
| Package / Case |
DirectFET™ Isometric SQ |
| REACH Status |
REACH Unaffected |
| Other Names |
2156-IRF6712STRPBF-448 |
| Standard Package |
1 |
N-Channel 25 V 17A (Ta), 68A (Tc) 2.2W (Ta), 36W (Tc) Surface Mount DIRECTFET™ SQ