Infineon Technologies IPN80R2K0P7ATMA1

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Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPN80R2K0P7ATMA1
Package: Bulk
Datasheet: PDF
Stock: 2159
SKU: IPN80R2K0P7ATMA1
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Details

Parameters
Mfr	Infineon Technologies
Series	CoolMOS™ P7
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	175 pF @ 500 V
FET Feature	-
Power Dissipation (Max)	6.4W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223
Package / Case	TO-261-4, TO-261AA
Base Product Number	IPN80R2
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-IPN80R2K0P7ATMA1-448
Standard Package	1

N-Channel 800 V 3A (Tc) 6.4W (Tc) Surface Mount PG-SOT223