Infineon Technologies IPI65R150CFD

N-CHANNEL POWER MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPI65R150CFD
Package: Bulk
Datasheet: PDF
Stock: 17
SKU: IPI65R150CFD
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Details

Parameters
Mfr	Infineon Technologies
Series	CoolMOS CFD2™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	150mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2340 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	195.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3-1
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 650 V 22.4A (Tc) 195.3W (Tc) Through Hole PG-TO262-3-1