Infineon Technologies IPI023NE7N3G

N-CHANNEL POWER MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPI023NE7N3G
Package: Bulk
Datasheet: PDF
Stock: 5
SKU: IPI023NE7N3G
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Unit Price: $2.2800

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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Rds On (Max) @ Id, Vgs	2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs	206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	14400 pF @ 37.5 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 75 V 120A (Tc) 300W (Tc) Through Hole PG-TO262-3