Infineon Technologies IPG20N06S2L65AAUMA1

MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPG20N06S2L65AAUMA1
Package: Bulk
Datasheet: -
Stock: 5996
SKU: IPG20N06S2L65AAUMA1
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to RFQ list

Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS®
Package	Bulk
Product Status	Obsolete
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Rds On (Max) @ Id, Vgs	65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	410pF @ 25V
Power - Max	43W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Package / Case	8-PowerVDFN
Supplier Device Package	PG-TDSON-8-10
Base Product Number	IPG20N
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

Mosfet Array 55V 20A (Tc) 43W (Tc) Surface Mount, Wettable Flank PG-TDSON-8-10