| Parameters |
| Mfr |
Infineon Technologies |
| Series |
OptiMOS™T2 |
| Package |
Bulk |
| Product Status |
Active |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 N-Channel (Dual) |
| FET Feature |
- |
| Drain to Source Voltage (Vdss) |
40V |
| Current - Continuous Drain (Id) @ 25°C |
20A (Tc) |
| Rds On (Max) @ Id, Vgs |
7.6mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 30µA |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
2940pF @ 25V |
| Power - Max |
65W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Supplier Device Package |
PG-TDSON-8-4 |
| Base Product Number |
IPG20N |
| ECCN |
EAR99 |
| HTSUS |
8542.39.0001 |
| Standard Package |
1 |
Mosfet Array 40V 20A (Tc) 65W (Tc) Surface Mount PG-TDSON-8-4