Infineon Technologies IPD80R1K4P7

800V, 1.4OHM, N-CHANNEL MOSFET,

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPD80R1K4P7
Package: Bulk
Datasheet: PDF
Stock: 2717
SKU: IPD80R1K4P7
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to RFQ list

Details

Parameters
Mfr	Infineon Technologies
Series	CoolMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 500 V
FET Feature	-
Power Dissipation (Max)	32W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-341
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	464

N-Channel 800 V 4A (Tc) 32W (Tc) Surface Mount PG-TO252-3-341