| Parameters |
| Mfr |
Infineon Technologies |
| Series |
OptiMOS®-P2 |
| Package |
Bulk |
| Product Status |
Obsolete |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
40 V |
| Current - Continuous Drain (Id) @ 25°C |
70A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Rds On (Max) @ Id, Vgs |
7.8mOhm @ 70A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 120µA |
| Gate Charge (Qg) (Max) @ Vgs |
92 nC @ 10 V |
| Vgs (Max) |
+5V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds |
5430 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
75W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PG-TO252-3-313 |
| Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Base Product Number |
IPD70 |
| ECCN |
OBSOLETE |
| Standard Package |
1 |
P-Channel 40 V 70A (Tc) 75W (Tc) Surface Mount PG-TO252-3-313