Infineon Technologies IPD50R800CE

IPD50R800 - 500V COOLMOS N-CHANN

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPD50R800CE
Package: Bulk
Datasheet: PDF
Stock: 3076
SKU: IPD50R800CE
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Details

Parameters
Mfr	Infineon Technologies
Series	CoolMOS™ CE
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	13V
Rds On (Max) @ Id, Vgs	800mOhm @ 1.5A, 13V
Vgs(th) (Max) @ Id	3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs	12.4 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-344
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	IPD50
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	1

N-Channel 500 V 7.6A (Tc) 60W (Tc) Surface Mount PG-TO252-3-344