Infineon Technologies IPA65R650CEXKSA1

MOSFET N-CH 650V 7A TO220

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPA65R650CEXKSA1
Package: Bulk
Datasheet: -
Stock: 6267
SKU: IPA65R650CEXKSA1
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Details

Parameters
Standard Package	1
Mfr	Infineon Technologies
Series	CoolMOS™ CE
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	28W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220 Full Pack
Package / Case	TO-220-3 Full Pack
Other Names	2156-IPA65R650CEXKSA1

N-Channel 650 V 7A (Tc) 28W (Tc) Through Hole PG-TO220 Full Pack