Infineon Technologies IPA126N10N3G

35A, 100V, 0.0126OHM, N-CHANNEL

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPA126N10N3G
Package: Bulk
Datasheet: PDF
Stock: 7460
SKU: IPA126N10N3G
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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™3
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	12.6mOhm @ 35A, 10V
Vgs(th) (Max) @ Id	3.5V @ 45µA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	33W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-111
Package / Case	TO-220-3 Full Pack
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	1

N-Channel 100 V 35A (Tc) 33W (Tc) Through Hole PG-TO220-3-111