Infineon Technologies IMYH200R100M1HXKSA1

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Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IMYH200R100M1HXKSA1
Package: Tube
Datasheet: -
Stock: 2548
SKU: IMYH200R100M1HXKSA1
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Unit Price: $30.9700

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Details

Parameters
Product Status	Active
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	2000 V
Current - Continuous Drain (Id) @ 25°C	26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	131mOhm @ 10A, 18V
Vgs(th) (Max) @ Id	5.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 18 V
Vgs (Max)	+20V, -7V
FET Feature	-
Power Dissipation (Max)	217W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-4-U04
Package / Case	TO-247-4
Base Product Number	IMYH200
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	240
Mfr	Infineon Technologies
Series	CoolSiC™
Package	Tube

N-Channel 2000 V 26A (Tc) 217W (Tc) Through Hole PG-TO247-4-U04