| Parameters |
| Mfr |
Infineon Technologies |
| Series |
CoolSiC™+ |
| Package |
Bulk |
| Product Status |
Active |
| Technology |
SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) |
650 V |
| Current - Average Rectified (Io) |
2A |
| Voltage - Forward (Vf) (Max) @ If |
1.8 V @ 2 A |
| Speed |
No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) |
0 ns |
| Current - Reverse Leakage @ Vr |
330 µA @ 650 V |
| Capacitance @ Vr, F |
70pF @ 1V, 1MHz |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package |
PG-TO263-2 |
| Operating Temperature - Junction |
-55°C ~ 175°C |
| Moisture Sensitivity Level (MSL) |
Vendor Undefined |
| REACH Status |
REACH Unaffected |
| Other Names |
2156-IDK02G65C5XTMA2-448 |
| Standard Package |
1 |
Diode 650 V 2A Surface Mount PG-TO263-2