| Parameters |
| Mfr |
Infineon Technologies |
| Series |
CoolSiC™+ |
| Package |
Bulk |
| Product Status |
Active |
| Technology |
SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) |
600 V |
| Current - Average Rectified (Io) |
10A |
| Voltage - Forward (Vf) (Max) @ If |
2.1 V @ 10 A |
| Speed |
No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) |
0 ns |
| Current - Reverse Leakage @ Vr |
90 µA @ 600 V |
| Capacitance @ Vr, F |
290pF @ 1V, 1MHz |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-2 |
| Supplier Device Package |
PG-TO220-2-2 |
| Operating Temperature - Junction |
-55°C ~ 175°C |
| HTSUS |
0000.00.0000 |
| Standard Package |
1 |
Diode 600 V 10A Through Hole PG-TO220-2-2