| Parameters |
| Mfr |
Infineon Technologies |
| Series |
CoolSiC™ |
| Package |
Tray |
| Product Status |
Active |
| Technology |
Silicon Carbide (SiC) |
| Configuration |
2 N-Channel |
| FET Feature |
Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) |
1200V |
| Current - Continuous Drain (Id) @ 25°C |
100A (Tj) |
| Rds On (Max) @ Id, Vgs |
8.1mOhm @ 100A, 18V |
| Vgs(th) (Max) @ Id |
5.15V @ 40mA |
| Gate Charge (Qg) (Max) @ Vgs |
297nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds |
8800pF @ 800V |
| Power - Max |
20mW |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Mounting Type |
Chassis Mount |
| Package / Case |
Module |
| Supplier Device Package |
AG-EASY1B |
| Base Product Number |
FF8MR12 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| Standard Package |
30 |
Mosfet Array 1200V 100A (Tj) 20mW Chassis Mount AG-EASY1B