| Parameters |
| Mfr |
Infineon Technologies |
| Series |
CoolSiC™ |
| Package |
Tray |
| Product Status |
Active |
| Technology |
Silicon Carbide (SiC) |
| Configuration |
2 N-Channel (Half Bridge) |
| FET Feature |
Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) |
1200V |
| Current - Continuous Drain (Id) @ 25°C |
145A (Tj) |
| Rds On (Max) @ Id, Vgs |
5.4mOhm @ 150A, 18V |
| Vgs(th) (Max) @ Id |
5.15V @ 60mA |
| Gate Charge (Qg) (Max) @ Vgs |
446nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds |
13200pF @ 800V |
| Power - Max |
20mW |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Mounting Type |
Chassis Mount |
| Package / Case |
Module |
| Supplier Device Package |
Module |
| Base Product Number |
FF6MR12 |
| RoHS Status |
ROHS3 Compliant |
| ECCN |
EAR99 |
| HTSUS |
8542.39.0001 |
| Other Names |
448-FF6MR12W2M1HB11BPSA1 |
| Standard Package |
15 |
Mosfet Array 1200V 145A (Tj) 20mW Chassis Mount Module