| Parameters |
| Mfr |
Infineon Technologies |
| Series |
C |
| Package |
Tray |
| Product Status |
Active |
| Technology |
Silicon Carbide (SiC) |
| Configuration |
2 N-Channel |
| FET Feature |
Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) |
2000V (2kV) |
| Current - Continuous Drain (Id) @ 25°C |
280A (Tc) |
| Rds On (Max) @ Id, Vgs |
5.3mOhm @ 300A, 18V |
| Vgs(th) (Max) @ Id |
5.15V @ 168mA |
| Gate Charge (Qg) (Max) @ Vgs |
1170nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds |
36100pF @ 1.2kV |
| Power - Max |
- |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Mounting Type |
Chassis Mount |
| Package / Case |
Module |
| Supplier Device Package |
AG-62MMHB |
| Base Product Number |
FF4MR20 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| Standard Package |
10 |
Mosfet Array 2000V (2kV) 280A (Tc) Chassis Mount AG-62MMHB