Infineon Technologies BUZ30AH

MOSFET N-CH 200V 21A TO220-3

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies BUZ30AH
Package: Bulk
Datasheet: PDF
Stock: 6072
SKU: BUZ30AH
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Details

Parameters
Mfr	Infineon Technologies
Series	SIPMOS®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Rds On (Max) @ Id, Vgs	130mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	1

N-Channel 200 V 21A (Tc) 125W (Tc) Through Hole PG-TO220-3