Infineon Technologies BSZ22DN20NS3G - Infineon Technologies FETs, MOSFETs - BOM, Chip Distributor, Quick Quotation 365day Warranty
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Infineon Technologies BSZ22DN20NS3G

BSZ22DN20 - 12V-300V N-CHANNEL P

  • Manufacturer: Infineon Technologies
  • Manufacturer's number: Infineon Technologies BSZ22DN20NS3G
  • Package: Bulk
  • Datasheet: PDF
  • Stock: 7459
  • SKU: BSZ22DN20NS3G
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Unit Price: $1.0000

Ext Price: $1.0000

Details

Tags

Parameters
Mfr Infineon Technologies
Series OptiMOS™3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 225mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 100 V
FET Feature -
Power Dissipation (Max) 34W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8-1
Package / Case 8-PowerTDFN
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1
N-Channel 200 V 7A (Tc) 34W (Tc) Surface Mount PG-TSDSON-8-1