Infineon Technologies BSS215P H6327

SMALL SIGNAL P-CHANNEL MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies BSS215P H6327
Package: Bulk
Datasheet: PDF
Stock: 6371
SKU: BSS215P H6327
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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™P2
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	150mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	600mV @ 11µA
Gate Charge (Qg) (Max) @ Vgs	3.6 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	346 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT23-3-5
Package / Case	TO-236-3, SC-59, SOT-23-3
RoHS Status	Not applicable
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	3,000

P-Channel 20 V 1.5A (Ta) 500mW (Ta) Surface Mount PG-SOT23-3-5