Infineon Technologies BSP373E6327

N-CHANNEL POWER MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies BSP373E6327
Package: Bulk
Datasheet: PDF
Stock: 9504
SKU: BSP373E6327
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Details

Parameters
Mfr	Infineon Technologies
Series	SIPMOS®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	300mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	550 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4
Package / Case	TO-261-4, TO-261AA
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2

N-Channel 100 V 1.7A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4