Infineon Technologies BSP296L6433

SMALL-SIGNAL N-CHANNEL MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies BSP296L6433
Package: Bulk
Datasheet: PDF
Stock: 6
SKU: BSP296L6433
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Details

Parameters
Mfr	Infineon Technologies
Series	SIPMOS®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	700mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id	1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs	17.2 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	364 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.79W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223
Package / Case	TO-261-4, TO-261AA
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	4,000

N-Channel 100 V 1.1A (Ta) 1.79W (Ta) Surface Mount PG-SOT223