Infineon Technologies BSO612CVG

BSO612 - 20V-60V COMPLEMENTARY M

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies BSO612CVG
Package: Bulk
Datasheet: PDF
Stock: 8341
SKU: BSO612CVG
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Details

Parameters
Mfr	Infineon Technologies
Series	SIPMOS®
Package	Bulk
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	N and P-Channel
FET Feature	-
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	3A (Ta), 2A (Ta)
Rds On (Max) @ Id, Vgs	120mOhm @ 3A, 10V, 300mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 20µA, 4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs	15.5nC @ 10V, 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	340pF, 400pF @ 25V
Power - Max	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	PG-DSO-8
Base Product Number	BSO612
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	687

Mosfet Array 60V 3A (Ta), 2A (Ta) 2W (Ta) Surface Mount PG-DSO-8