Infineon Technologies BSO330N02KG

N-CHANNEL POWER MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies BSO330N02KG
Package: Bulk
Datasheet: PDF
Stock: 1
SKU: BSO330N02KG
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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Bulk
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	5.4A
Rds On (Max) @ Id, Vgs	30mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs	4.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	730pF @ 10V
Power - Max	1.4W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	PG-DSO-8
Base Product Number	BSO330N02
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

Mosfet Array 20V 5.4A 1.4W Surface Mount PG-DSO-8