Infineon Technologies BSD816SNH6327

MOSFET N-CH 20V 1.4A SOT363-6

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies BSD816SNH6327
Package: Bulk
Datasheet: PDF
Stock: 1909
SKU: BSD816SNH6327
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Details

Parameters
Mfr	Infineon Technologies
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1.4A (Ta)
Rds On (Max) @ Id, Vgs	160mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id	950mV @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs	0.6 nC @ 2.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	180 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT363-6
Package / Case	6-VSSOP, SC-88, SOT-363
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	6,000

N-Channel 20 V 1.4A (Ta) 500mW (Ta) Surface Mount PG-SOT363-6