Infineon Technologies BSC026N02KSG

BSC026N02 - 12V-300V N-CHANNEL P

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies BSC026N02KSG
Package: Bulk
Datasheet: PDF
Stock: 27
SKU: BSC026N02KSG
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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™2
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	25A (Ta), 134A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	2.6mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	52.7 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	7800 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 20 V 25A (Ta), 134A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount PG-TDSON-8-1