Infineon Technologies 1IRF3710PBF

IRF3710 - 100V HEXFET N-CHANNEL

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies 1IRF3710PBF
Package: Bulk
Datasheet: PDF
Stock: 8970
SKU: 1IRF3710PBF
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Details

Parameters
Mfr	Infineon Technologies
Series	HEXFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	23mOhm @ 28A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3130 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
HTSUS	0000.00.0000
Standard Package	1

N-Channel 100 V 57A (Tc) 200W (Tc) Through Hole TO-220