Parameters |
Mfr |
NXP USA Inc. |
Series |
TrenchMOS™ |
Package |
Tape & Reel (TR) |
Product Status |
Obsolete |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel (Dual) |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
7.8A |
Rds On (Max) @ Id, Vgs |
30mOhm @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id |
700mV @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
23.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
1366pF @ 16V |
Power - Max |
3.1W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package |
8-TSSOP |
Base Product Number |
PMWD26 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
2,500 |
Mosfet Array 20V 7.8A 3.1W Surface Mount 8-TSSOP