Goford Semiconductor GT52N10T

N100V,RD(MAX)<9M@10V,RD(MAX)<15M

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor GT52N10T
Package: Tube
Datasheet: PDF
Stock: 50
SKU: GT52N10T
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	80A
Rds On (Max) @ Id, Vgs	9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2626 pF @ 50 V
Power Dissipation (Max)	227W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3 Full Pack
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

N-Channel 100 V 80A 227W Through Hole TO-220