Goford Semiconductor GT100N12T

N120V,RD(MAX)<10M@10V,VTH2.5V~3.

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor GT100N12T
Package: Tube
Datasheet: PDF
Stock: 3
SKU: GT100N12T
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	10mOhm @ 35A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3050 pF @ 60 V
FET Feature	-
Power Dissipation (Max)	120W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

N-Channel 120 V 70A (Tc) 120W (Tc) Through Hole TO-220