Goford Semiconductor GT095N10S

N100V, 21A,RD<9.5M@10V,VTH1.2V~2

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor GT095N10S
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 28
SKU: GT095N10S
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29.4 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2131 pF @ 50 V
Power Dissipation (Max)	8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP
Package / Case	8-SOIC (0.154", 3.90mm Width)
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	4,000

N-Channel 100 V 11A (Tc) 8W (Tc) Surface Mount 8-SOP