Goford Semiconductor GT065P06T

P-60V,-82A,RD(MAX)<7.5M@-10V,VTH

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor GT065P06T
Package: Tube
Datasheet: PDF
Stock: 5776
SKU: GT065P06T
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Details

Parameters
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5335 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
RoHS Status	RoHS Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0000
Standard Package	50
Mfr	Goford Semiconductor
Series	-
Package	Tube
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)

P-Channel 60 V 82A (Tc) 150W (Tc) Through Hole TO-220