Goford Semiconductor GT013N04TI

N40V, 220A,RD<2.5M@10V,VTH2.0V~5

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor GT013N04TI
Package: Tube
Datasheet: PDF
Stock: 8741
SKU: GT013N04TI
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	220A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3986 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	90W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
RoHS Status	RoHS Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0000
Standard Package	50

N-Channel 40 V 220A (Tc) 90W (Tc) Through Hole TO-220