Goford Semiconductor GT011N03D5E

MOSFET N-CH ESD 30V 209A DFN5*6-

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor GT011N03D5E
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 8245
SKU: GT011N03D5E
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $1.6700

Ext Price: $1.6700

Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	209A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	6503 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	89W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-DFN (4.9x5.75)
Package / Case	8-PowerTDFN
RoHS Status	RoHS Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0000
Standard Package	5,000

N-Channel 30 V 209A (Tc) 89W (Tc) Surface Mount 8-DFN (4.9x5.75)